c opyright ruichips semiconductor co . , ltd rev . a C feb ., 2012 www. ruichips .com ru 30120 m n - channel advanced power mosfet mosfet features pin description applications symbol parameter rating unit common ratings ( t c =25 c u nless otherwise noted) v dss drain - source voltage 3 0 v gss gate - source voltage 2 0 v t j maximum junction temperature 1 50 c t stg storage temperature range - 55 to 1 50 c i s diode continuous forward current t c =25 c 50 a mounted on large heat sink i d p 300 s pulse drain current tested t c =25 c 41 0 a t c =25 c 120 t c =100 c 97 a t a =25 c 30 i d continuous drain current ( v gs =10v) t a = 7 0 c 24 t c =25 c 96 t c =100 c 38 w t a =25 c 4.2 p d maximum power dissipation t a = 7 0 c 2.7 ? 3 0 v/ 120 a, r ds ( on ) = 2 m ( tpy.)@ v gs =10v r ds ( on ) = 2.9 m ( tpy.)@ v gs = 4. 5 v ? super high dense cell design ? reliable and rugged ? 100% avalanche tested ? lead free and green devices available ( rohs compliant) ? dc/dc conversion ? switching application absolute maximum ratings n - channel mosfe t pdfn 5x6
c opyright ruichips semiconductor co . , ltd rev . a C feb ., 2012 2 www. ruichips .com ru 30120 m mounted on large heat sink r q jc thermal resistance - junction to case 1.3 c /w r q j a thermal resistance - junction to ambient 30 c /w drain - source avalanche ratings e a s avalanche energy, single pulsed 225 m j electrical characteristics ( t c =25 c unless otherwise noted) ru 30120 m symbol parameter test condition min. typ. max. unit static characteristics bv dss drain - source breakdown voltage v gs =0v, i ds =250 m a 3 0 v v ds = 3 0 v, v gs =0v 1 i dss zero gate voltage drain current t j =85 c 30 m a v gs ( th) gate threshold voltage v ds =v gs , i ds =250 m a 1 2 3 v i gss gate leakage current v gs = 2 0 v, v ds =0v 10 0 n a v gs = 10 v, i ds = 20 a 2 3 m w r ds ( on ) drain - source on - state resistance v gs = 4.5 v, i ds = 20 a 2.9 4 m w d iode characteristics v sd diode forward voltage i sd = 2 0 a, v gs =0v 1. 2 v t rr reverse recovery time 32 ns q rr reverse recovery charge i sd = 20 a, dl sd /dt=100a/ m s 7 0 nc dynamic characteristics r g gate r esistance v gs = 0 v,v ds =0v ,f=1mhz 1. 8 w c iss input capacitance 3 17 0 c oss output capacitance 48 0 c rss reverse transfer capacitance v gs =0v, v ds = 15 v, frequency=1.0mhz 265 pf t d ( on ) turn - on delay time 2 7 t r turn - on rise time 9 2 t d ( off ) turn - off delay time 6 7 t f turn - off fall time v dd = 15 v, r l = 0 . 7 5 w , i ds = 20 a, v gen =10v, r g = 3 w 3 7 ns gate charge characteristics q g total gate charge 6 5 q gs gate - source charge 1 4 q gd gate - drain charge v ds = 24 v, v gs =10v, i ds = 20 a 2 2 nc
c opyright ruichips semiconductor co . , ltd rev . a C feb ., 2012 3 www. ruichips .com ru 30120 m note s : max cu rrent is limited to 50a by the package. pulse width limited by safe operating area. when mounted on 1 inch square copper boa rd , t 10sec . limited by t jmax , i as = 30 a, v dd = 24 v, r g = 50 , starting t j = 25c . pulse test ; p ulse width 3 0 0 m s, duty cycle 2% . guaranteed by design, not subject to production testing . ordering and marking information device marking package packaging quantity reel size tape width ru 30120 m ru 30120 m pdfn 5x6 tape&reel 3000 13 12mm
c opyright ruichips semiconductor co . , ltd rev . a C feb ., 2012 4 www. ruichips .com ru 30120 m typical characteristics power dissipation drain current p tot - power ( w) i d - drain current (a) t j - junction temperature ( c) t j - junction temperature ( c) safe operation area therm al transient impedance i d - drain current (a) normalized effective transient v ds - drain - source voltage (v) square wave pulse duration ( sec)
c opyright ruichips semiconductor co . , ltd rev . a C feb ., 2012 5 www. ruichips .com ru 30120 m typical characteristics output characteristics drain - sour ce on resistance i d - drain current (a) r ds(on) - on resistance ( m ) v ds - drain - source voltage (v) i d - drain current (a) drain - source on resistance gate threshold voltage r ds ( on ) - on - resist ance (m ? ) normalized threshold voltage v gs - gate - source voltage (v) t j - junction temperature (c)
c opyright ruichips semiconductor co . , ltd rev . a C feb ., 2012 6 www. ruichips .com ru 30120 m typical characteristics drain - source on resistance source - drain diode forward normalized on resistanc e i s - source current (a) t j - junction temperature (c) v sd - source - drain voltage (v) capacitance gate charge c - capacitance ( pf ) v gs - gate - source voltage (v) v ds - drain - source voltage (v) q g - gate charge (nc)
c opyright ruichips semiconductor co . , ltd rev . a C feb ., 2012 7 www. ruichips .com ru 30120 m avalanche test circuit and waveforms switching time test circuit and waveforms
c opyright ruichips semiconductor co . , ltd rev . a C feb ., 2012 8 www. ruichips .com ru 30120 m package information pdfn 5x6 all dimensions refer to jedec standard do not include mold flash or protrusions mm inch mm inch symbol min max min max sym bol min max min max a 1.030 1.170 0.040 0.046 e2 1.600 - 0.063 - b 0.340 0.480 0.013 0.019 e 1.270 bsc 0.050 bsc c 0.824 0.970 0.032 0.038 l 0.050 0.250 0.002 0.010 d 4.800 5.400 0.189 0.213 l1 0.380 0.500 0.015 0.020 d1 4 .110 4.310 0.162 0.170 l2 0.380 0.500 0.015 0.020 d2 4.800 5.000 0.189 0.197 h 3.500 3.700 0.138 0.146 e 5.950 6.150 0.234 0.242 i - 0.180 - 0.007 e1 5.650 5.850 0.222 0.230
c opyright ruichips semiconductor co . , ltd rev . a C feb ., 2012 9 www. ruichips .com ru 30120 m customer service worldwide sales and service : sales@ru i chips.com technical s upport : technical@ruichips.com investor relations contacts : investor@ruichips.com marcom contact: marcom@ruichips.com editoria l contact : editorial@ruichips.com hr conta c t: hr@ruichips. com legal contact: legal@ruichips.com shen zhen ruichips semiconduct or co., ltd room 501, the 5floor an tong industrial bui l ding, n o.207 mei hua road fu tian area shen zhen city , chi na tel: ( 86 - 755) 8311 - 5334 f ax : (86 - 755) 8311 - 4278 e - mail: sales - sz@ruichips.com
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